PUMB9 Datasheet, Equivalent, Cross Reference Search
Type Designator: PUMB9
SMD Transistor Code: B*9
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT363
PUMB9 Transistor Equivalent Substitute - Cross-Reference Search
PUMB9 Datasheet (PDF)
pemb9 pumb9.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMB9; PUMB9PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 kProduct data sheet 2003 Oct 03Supersedes data of 2003 Feb 03NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB9; PUMB9R1 = 10 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .