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PUMB9 Specs and Replacement

Type Designator: PUMB9

SMD Transistor Code: B*9

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT363

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PUMB9 datasheet

 ..1. Size:137K  philips

 pemb9 pumb9.pdf pdf_icon

PUMB9

DISCRETE SEMICONDUCTORS DATA SHEET PEMB9; PUMB9 PNP/PNP resistor-equipped transistors; R1 = 10 k , R2 = 47 k Product data sheet 2003 Oct 03 Supersedes data of 2003 Feb 03 NXP Semiconductors Product data sheet PNP/PNP resistor-equipped transistors; PEMB9; PUMB9 R1 = 10 k , R2 = 47 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT ... See More ⇒

Detailed specifications: PUMB18 , PUMB19 , PUMB2 , PUMB20 , PUMB24 , PUMB3 , PUMB30 , PUMB4 , BC547 , PUMD10 , PUMD12 , PUMD13 , PUMD14 , PUMD15 , PUMD16 , PUMD17 , PUMD18 .

History: PUMD19 | PUMD17

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