PUMX1 Specs and Replacement
Type Designator: PUMX1
SMD Transistor Code: ZtZ
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT363
PUMX1 Substitution
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PUMX1 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 PUMX1 NPN general purpose double transistor 1999 Apr 14 Preliminary specification Supersedes data of 1997 Jul 09 Philips Semiconductors Preliminary specification NPN general purpose double transistor PUMX1 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 40 V) 1, 4 emitter TR1; TR2 ... See More ⇒
PUMX1 40 V, 100 mA NPN/NPN general-purpose transistor Rev. 04 20 January 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor with two independently operating transistors in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement ... See More ⇒
Detailed specifications: PUMH20 , PUMH24 , PUMH30 , PUMH4 , PUMH7 , PUMH9 , PUML1 , PUMT1 , 2SC1815 , PUMZ1 , PXT2222A , PXT2907A , PXT4401 , PXT4403 , PXTA14 , PXTA42 , PXTA92 .
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