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PXTA42 Specs and Replacement

Type Designator: PXTA42

SMD Transistor Code: p1D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.3 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT89

 PXTA42 Substitution

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PXTA42 datasheet

 ..1. Size:99K  philips

 pxta42.pdf pdf_icon

PXTA42

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PXTA42 NPN high-voltage transistor Product data sheet 2004 Dec 09 Supersedes data of 1999 Apr 26 NXP Semiconductors Product data sheet NPN high-voltage transistor PXTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 emitter 2 collector APPLICATIONS 3 base Teleph... See More ⇒

 ..2. Size:46K  philips

 pxta42 3.pdf pdf_icon

PXTA42

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA42 NPN high-voltage transistor 1999 Apr 26 Product specification Supersedes data of 1997 Jun 18 Philips Semiconductors Product specification NPN high-voltage transistor PXTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 emitter 2 collector APPLICATIONS 3 base ... See More ⇒

 ..3. Size:790K  nxp

 pxta42.pdf pdf_icon

PXTA42

PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PXTA92. 1.2 Features and benefits High breakdown voltage AEC-Q101 qualified Medium power and flat lead... See More ⇒

 9.1. Size:799K  mcc

 pxta44.pdf pdf_icon

PXTA42

PXTA44 Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=100 A, IE=0 Collector-Base Breakdown Voltage 500 V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 400 V V(BR)EBO IE=10 A, IC=0 Emitter-Base Breakdown Voltage 6V ICBO VCB=400V, IE=0 Collector-Base Cutoff Current 100 nA IEBO VEB=4V, IC=0 Emitter-... See More ⇒

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Detailed specifications: PUMT1 , PUMX1 , PUMZ1 , PXT2222A , PXT2907A , PXT4401 , PXT4403 , PXTA14 , BD135 , PXTA92 , PZT4401 , PZT4403 , PZTA14 , PZTA44 , 2ST2121 , 2ST31A , 2ST5949 .

History: 3DG1859 | H227

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