All Transistors. PXTA42 Datasheet

 

PXTA42 Datasheet and Replacement


   Type Designator: PXTA42
   SMD Transistor Code: p1D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.3 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT89
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PXTA42 Datasheet (PDF)

 ..1. Size:99K  philips
 pxta42.pdf pdf_icon

PXTA42

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PXTA42NPN high-voltage transistorProduct data sheet 2004 Dec 09Supersedes data of 1999 Apr 26 NXP Semiconductors Product data sheetNPN high-voltage transistor PXTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 emitter2 collectorAPPLICATIONS3 base Teleph

 ..2. Size:46K  philips
 pxta42 3.pdf pdf_icon

PXTA42

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PXTA42NPN high-voltage transistor1999 Apr 26Product specificationSupersedes data of 1997 Jun 18Philips Semiconductors Product specificationNPN high-voltage transistor PXTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 emitter2 collectorAPPLICATIONS3 base

 ..3. Size:790K  nxp
 pxta42.pdf pdf_icon

PXTA42

PXTA42300 V, 100 mA NPN high-voltage transistorRev. 5 11 July 2011 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PXTA92.1.2 Features and benefits High breakdown voltage AEC-Q101 qualified Medium power and flat lead

 9.1. Size:799K  mcc
 pxta44.pdf pdf_icon

PXTA42

PXTA44Electrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO IC=100A, IE=0Collector-Base Breakdown Voltage 500 VV(BR)CEO IC=1mA, IB=0Collector-Emitter Breakdown Voltage 400 VV(BR)EBO IE=10A, IC=0Emitter-Base Breakdown Voltage 6VICBO VCB=400V, IE=0Collector-Base Cutoff Current 100 nAIEBO VEB=4V, IC=0Emitter-

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History: KT208I | BDY12B | ED1602D | BDX88 | 2SD1007HR | DRC9143X | SFE245

Keywords - PXTA42 transistor datasheet

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