PXTA42 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PXTA42
Código: p1D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.3 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de PXTA42
PXTA42 Datasheet (PDF)
pxta42.pdf

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PXTA42NPN high-voltage transistorProduct data sheet 2004 Dec 09Supersedes data of 1999 Apr 26 NXP Semiconductors Product data sheetNPN high-voltage transistor PXTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 emitter2 collectorAPPLICATIONS3 base Teleph
pxta42 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PXTA42NPN high-voltage transistor1999 Apr 26Product specificationSupersedes data of 1997 Jun 18Philips Semiconductors Product specificationNPN high-voltage transistor PXTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 emitter2 collectorAPPLICATIONS3 base
pxta42.pdf

PXTA42300 V, 100 mA NPN high-voltage transistorRev. 5 11 July 2011 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PXTA92.1.2 Features and benefits High breakdown voltage AEC-Q101 qualified Medium power and flat lead
pxta44.pdf

PXTA44Electrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO IC=100A, IE=0Collector-Base Breakdown Voltage 500 VV(BR)CEO IC=1mA, IB=0Collector-Emitter Breakdown Voltage 400 VV(BR)EBO IE=10A, IC=0Emitter-Base Breakdown Voltage 6VICBO VCB=400V, IE=0Collector-Base Cutoff Current 100 nAIEBO VEB=4V, IC=0Emitter-
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sb1243 | a1123 transistor | skd502t datasheet | svf7n65f | 2sc1419 datasheet | 2n4249 datasheet | tip130 | se9302 transistor