PXTA42
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PXTA42
Código: p1D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.3
W
Tensión colector-base (Vcb): 300
V
Tensión colector-emisor (Vce): 300
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar PXTA42
PXTA42
Datasheet (PDF)
..1. Size:99K philips
pxta42.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PXTA42NPN high-voltage transistorProduct data sheet 2004 Dec 09Supersedes data of 1999 Apr 26 NXP Semiconductors Product data sheetNPN high-voltage transistor PXTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 emitter2 collectorAPPLICATIONS3 base Teleph
..2. Size:46K philips
pxta42 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PXTA42NPN high-voltage transistor1999 Apr 26Product specificationSupersedes data of 1997 Jun 18Philips Semiconductors Product specificationNPN high-voltage transistor PXTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 emitter2 collectorAPPLICATIONS3 base
..3. Size:790K nxp
pxta42.pdf
PXTA42300 V, 100 mA NPN high-voltage transistorRev. 5 11 July 2011 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PXTA92.1.2 Features and benefits High breakdown voltage AEC-Q101 qualified Medium power and flat lead
9.1. Size:799K mcc
pxta44.pdf
PXTA44Electrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO IC=100A, IE=0Collector-Base Breakdown Voltage 500 VV(BR)CEO IC=1mA, IB=0Collector-Emitter Breakdown Voltage 400 VV(BR)EBO IE=10A, IC=0Emitter-Base Breakdown Voltage 6VICBO VCB=400V, IE=0Collector-Base Cutoff Current 100 nAIEBO VEB=4V, IC=0Emitter-
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