All Transistors. 2STA2121 Datasheet

 

2STA2121 Datasheet and Replacement


   Type Designator: 2STA2121
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 220 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 17 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 25 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO264
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2STA2121 Datasheet (PDF)

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 2sta2121.pdf pdf_icon

2STA2121

2STA2121High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -250 V Complementary to 2STC5949 Typical ft = 25 MHz Fully characterized at 125 oCApplication Audio power amplifierTO-264DescriptionThe device is a PNP transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor for linear amplifier) t

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 2sta2120.pdf pdf_icon

2STA2121

2STA2120High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -250 V Complementary to 2STC5948 Typical ft = 25 MHz Fully characterized at 125 oCApplication32 Audio power amplifier1TO-3PDescriptionThe device is a PNP transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor fo

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 2sta2510.pdf pdf_icon

2STA2121

2STA2510High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Typical ft = 20 MHz Fully characterized at 125 oC32Application1TO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor fo

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BD538 | D71F2T1 | MJE13001AT | 2SC4519-4 | PN901 | MRF2001 | CMST5087

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