BULD741 Datasheet, Equivalent, Cross Reference Search
Type Designator: BULD741
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 1050 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 48
Noise Figure, dB: -
Package: DPAK
BULD741 Transistor Equivalent Substitute - Cross-Reference Search
BULD741 Datasheet (PDF)
buld741.pdf
BULD741High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3321Description1The device is manufactured using high voltage DPAK IPAKMulti-Epitaxial Planar technology for high TO-252 TO-251switching speeds and high vol
buld742c.pdf
BULD742CHigh voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed31ApplicationsDPAK Electronic ballast for fluorescent lighting Switch mode power suppliesDescriptionThe device is manufactured using high voltage Figure 1
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
