STBV32 Specs and Replacement
Type Designator: STBV32
SMD Transistor Code: BV32
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO92
STBV32 Substitution
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STBV32 datasheet
STBV32 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications Compact fluorescent lamps (CFLS) TO-92 TO-92AP SMPS for battery charger Description Figure 1. Internal schematic diagram The device is manufactured us... See More ⇒
Spec. No. C827A3 Issued Date 2007.09.20 CYStech Electronics Corp. Revised Date 2014.05.08 Page No. 1/6 High Voltage NPN Power Transistor STBV32A3 Features High breakdown voltage, V =450V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free lead plating package Symbol Outline STBV32A3 TO-92 B Base C Collector E Emitter E C B ... See More ⇒
Detailed specifications: ST600K, ST631K, ST83003, ST8812FX, ST901T, ST93003, STB13005, STB13007DT4, NJW0281G, STBV42, STBV45, STD13003, STD1802, STD1802T4A, STD1805, STD2805, STD616A
Keywords - STBV32 pdf specs
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History: PVR100AD-B12V
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