BUL62B Specs and Replacement
Type Designator: BUL62B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO251
BUL62B Substitution
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BUL62B datasheet
BUL62B SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm (inches) HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) SILICON POWER TRANSISTOR 5.46 (0.215) 0.94 (0.037) 1.09 (0.043) 1.30 (0.051) Designed for use in electronic ballast applications 5.97 (0.235) 6.22 (0.245) 1 2 3 SEMEFAB DESI... See More ⇒
BUL62A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm (inches) HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) SILICON POWER TRANSISTOR 5.46 (0.215) 0.94 (0.037) 1.09 (0.043) 1.30 (0.051) Designed for use in electronic ballast applications 5.97 (0.235) 6.22 (0.245) 1 2 3 SEMEFAB DESI... See More ⇒
Detailed specifications: 2SA2154, 2SA2154CT, 2SA2154MFV, 2SA2195, 2SA2214, 2SA2215, 2SA562TM, 2SC1815L, BC639, 2SC4666, 2SC4738F, 2SC4738FT, 2SC5232, 2SC5233, 2SC5376, 2SC5376CT, 2SC5376F
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