2SC752(G)TM Specs and Replacement

Type Designator: 2SC752(G)TM

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

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2SC752(G)TM datasheet

 8.1. Size:68K  toshiba

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2SC752(G)TM

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 8.2. Size:373K  toshiba

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2SC752(G)TM

2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Unit mm Computer, Counter Applications High transition frequency fT = 400 MHz (typ.) Low saturation voltage V = 0.3 V (max) CE (sat) High speed switching time t = 15 ns (typ.) stg Maximum Ratings (Ta = = 25 C) = = Characteristics ... See More ⇒

 8.3. Size:456K  blue-rocket-elect

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2SC752(G)TM

2SC752TM(BR3DG752TMK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High transition frequency, low saturation voltage, high speed switching time. / Applications Ultra high speed switchi... See More ⇒

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Detailed specifications: 2SC6026CT, 2SC6026MFV, 2SC6067, 2SC6100, 2SC6132, 2SC6133, 2SC6134, 2SC6135, 2SC5200, TTA1586FU, TTC4116FU, 2SA1873, 2SC4944, HN1A01F, HN1A01FE, HN1A01FU, HN1A02F

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