HN1A26FS Specs and Replacement

Type Designator: HN1A26FS

SMD Transistor Code: 8F_8H

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 1.6 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: FS6

 HN1A26FS Substitution

- BJT ⓘ Cross-Reference Search

 

HN1A26FS datasheet

 ..1. Size:149K  toshiba

 hn1a26fs.pdf pdf_icon

HN1A26FS

HN1A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A26FS Frequency General-Purpose Amplifier Applications Unit mm Two devices are incorporated into a fine-pitch, small-mold (6-pin) 1.0 0.05 package. 0.8 0.05 0.1 0.05 0.1 0.05 High voltage VCEO = -50 V High current IC = -100 mA (max) 1 6 High hFE hFE = 120 to 400 Excellent ... See More ⇒

Detailed specifications: TTC4116FU, 2SA1873, 2SC4944, HN1A01F, HN1A01FE, HN1A01FU, HN1A02F, HN1A07F, BC548, HN1B01F, HN1B01FU, HN1B04F, HN1B04FE, HN1B04FU, HN1B26FS, HN1C01F, HN1C01FE

Keywords - HN1A26FS pdf specs

 HN1A26FS cross reference

 HN1A26FS equivalent finder

 HN1A26FS pdf lookup

 HN1A26FS substitution

 HN1A26FS replacement