All Transistors. HN1A26FS Datasheet

 

HN1A26FS Datasheet and Replacement


   Type Designator: HN1A26FS
   SMD Transistor Code: 8F_8H
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 1.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: FS6
 

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HN1A26FS Datasheet (PDF)

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HN1A26FS

HN1A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, small-mold (6-pin) 1.00.05package. 0.80.05 0.10.050.10.05 High voltage: VCEO = -50 V High current: IC = -100 mA (max) 1 6 High hFE : hFE = 120 to 400 Excellent

Datasheet: TTC4116FU , 2SA1873 , 2SC4944 , HN1A01F , HN1A01FE , HN1A01FU , HN1A02F , HN1A07F , 2N3904 , HN1B01F , HN1B01FU , HN1B04F , HN1B04FE , HN1B04FU , HN1B26FS , HN1C01F , HN1C01FE .

History: 2N251A | 2N4071 | 2N2906AUBC | 2SD2195

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