All Transistors. HN1A26FS Datasheet

 

HN1A26FS Datasheet and Replacement


   Type Designator: HN1A26FS
   SMD Transistor Code: 8F_8H
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 1.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: FS6
 

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HN1A26FS Datasheet (PDF)

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HN1A26FS

HN1A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, small-mold (6-pin) 1.00.05package. 0.80.05 0.10.050.10.05 High voltage: VCEO = -50 V High current: IC = -100 mA (max) 1 6 High hFE : hFE = 120 to 400 Excellent

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BC528-16 | BC445-18 | BCY86B | 2SB1204Q | HN1B01F | TBC549

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