All Transistors. HN1A26FS Datasheet

 

HN1A26FS Datasheet and Replacement


   Type Designator: HN1A26FS
   SMD Transistor Code: 8F_8H
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 1.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: FS6
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HN1A26FS Datasheet (PDF)

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HN1A26FS

HN1A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, small-mold (6-pin) 1.00.05package. 0.80.05 0.10.050.10.05 High voltage: VCEO = -50 V High current: IC = -100 mA (max) 1 6 High hFE : hFE = 120 to 400 Excellent

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SD161 | AUY29-5 | 2SC5409 | T2058 | BSX59 | OC304 | DDTC114GCA

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