HN1B26FS Datasheet, Equivalent, Cross Reference Search
Type Designator: HN1B26FS
SMD Transistor Code: TF_TH
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: FS6
HN1B26FS Transistor Equivalent Substitute - Cross-Reference Search
HN1B26FS Datasheet (PDF)
..1. Size:172K toshiba
hn1b26fs.pdf
hn1b26fs.pdf
HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1B26FS General-Purpose Amplifier Applications Unit: mm1.00.05Q1 0.80.05 0.10.050.10.05 High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 6 High hFE : hFE = 120~400 2 543Q2 High voltage an
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N1961-46 | BLX54 | GT322M7
