All Transistors. HN1B26FS Datasheet

 

HN1B26FS Datasheet and Replacement


   Type Designator: HN1B26FS
   SMD Transistor Code: TF_TH
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: FS6
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HN1B26FS Datasheet (PDF)

 ..1. Size:172K  toshiba
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HN1B26FS

HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1B26FS General-Purpose Amplifier Applications Unit: mm1.00.05Q1 0.80.05 0.10.050.10.05 High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 6 High hFE : hFE = 120~400 2 543Q2 High voltage an

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