HN1B26FS Specs and Replacement
Type Designator: HN1B26FS
SMD Transistor Code: TF_TH
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Package: FS6
HN1B26FS Substitution
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HN1B26FS datasheet
HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1B26FS General-Purpose Amplifier Applications Unit mm 1.0 0.05 Q1 0.8 0.05 0.1 0.05 0.1 0.05 High voltage and high current VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 6 High hFE hFE = 120 400 2 5 4 3 Q2 High voltage an... See More ⇒
Detailed specifications: HN1A02F, HN1A07F, HN1A26FS, HN1B01F, HN1B01FU, HN1B04F, HN1B04FE, HN1B04FU, TIP122, HN1C01F, HN1C01FE, HN1C01FU, HN1C03F, HN1C03FU, HN1C05FE, HN1C07F, HN1C26FS
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