HN1C26FS Specs and Replacement

Type Designator: HN1C26FS

SMD Transistor Code: 7F_7H

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 0.95 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: FS6

 HN1C26FS Substitution

- BJT ⓘ Cross-Reference Search

 

HN1C26FS datasheet

 ..1. Size:145K  toshiba

 hn1c26fs.pdf pdf_icon

HN1C26FS

HN1C26FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C26FS Frequency General-Purpose Amplifier Applications Unit mm Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1.0 0.05 High voltage VCEO = 50 V 0.8 0.05 0.1 0.05 0.1 0.05 High current IC = 100 mA (max) High hFE hFE = 120 to 400 1 6 Excellent ... See More ⇒

Detailed specifications: HN1B26FS, HN1C01F, HN1C01FE, HN1C01FU, HN1C03F, HN1C03FU, HN1C05FE, HN1C07F, 13009, HN2A01FE, HN2A01FU, HN2A26FS, HN2C01FE, HN2C01FU, HN2C26FS, HN3A51F, HN3A56F

Keywords - HN1C26FS pdf specs

 HN1C26FS cross reference

 HN1C26FS equivalent finder

 HN1C26FS pdf lookup

 HN1C26FS substitution

 HN1C26FS replacement