All Transistors. HN1C26FS Datasheet

 

HN1C26FS Datasheet and Replacement


   Type Designator: HN1C26FS
   SMD Transistor Code: 7F_7H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 0.95 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: FS6
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HN1C26FS Datasheet (PDF)

 ..1. Size:145K  toshiba
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HN1C26FS

HN1C26FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1.00.05 High voltage : VCEO = 50 V 0.80.05 0.10.050.10.05 High current : IC = 100 mA (max) High hFE : hFE = 120 to 400 1 6 Excellent

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N5430X | ZX5T853G | 2SC1353 | CMLT4413 | UNR221L | MJE13001H | DTD114E

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