All Transistors. HN2A01FE Datasheet

 

HN2A01FE Datasheet and Replacement


   Type Designator: HN2A01FE
   SMD Transistor Code: M1G_M1Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: ES6
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HN2A01FE Datasheet (PDF)

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HN2A01FE

HN2A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1mA) / (IC = -2mA)= 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q

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HN2A01FE

HN2A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A01FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1mA) / (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KTB2510 | 2SA3802 | D29E2 | 2SB952A | BDS28A | KT637A-2 | TIPK115

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