All Transistors. HN2A01FE Datasheet

 

HN2A01FE Datasheet and Replacement


   Type Designator: HN2A01FE
   SMD Transistor Code: M1G_M1Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: ES6
 

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HN2A01FE Datasheet (PDF)

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HN2A01FE

HN2A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1mA) / (IC = -2mA)= 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q

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HN2A01FE

HN2A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A01FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1mA) / (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (

Datasheet: HN1C01F , HN1C01FE , HN1C01FU , HN1C03F , HN1C03FU , HN1C05FE , HN1C07F , HN1C26FS , 13003 , HN2A01FU , HN2A26FS , HN2C01FE , HN2C01FU , HN2C26FS , HN3A51F , HN3A56F , HN3B01F .

History: HN3B01F | DTC143EEB | IT137-71 | NB221HI | MPS6726 | MPS6735 | DT600-450

Keywords - HN2A01FE transistor datasheet

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