HN2A01FE Specs and Replacement
Type Designator: HN2A01FE
SMD Transistor Code: M1G_M1Y
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: ES6
HN2A01FE Substitution
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HN2A01FE datasheet
HN2A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A01FE Unit mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = -50V, IC = -150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1mA) / (IC = -2mA)= 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) (Q... See More ⇒
HN2A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A01FU Unit mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = -50V, IC = -150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1mA) / (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) (... See More ⇒
Detailed specifications: HN1C01F, HN1C01FE, HN1C01FU, HN1C03F, HN1C03FU, HN1C05FE, HN1C07F, HN1C26FS, 2N3906, HN2A01FU, HN2A26FS, HN2C01FE, HN2C01FU, HN2C26FS, HN3A51F, HN3A56F, HN3B01F
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