HN2A01FU Specs and Replacement

Type Designator: HN2A01FU

SMD Transistor Code: M1G_M1Y

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: US6

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HN2A01FU datasheet

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HN2A01FU

HN2A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A01FU Unit mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = -50V, IC = -150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1mA) / (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) (... See More ⇒

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HN2A01FU

HN2A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A01FE Unit mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = -50V, IC = -150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1mA) / (IC = -2mA)= 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) (Q... See More ⇒

Detailed specifications: HN1C01FE, HN1C01FU, HN1C03F, HN1C03FU, HN1C05FE, HN1C07F, HN1C26FS, HN2A01FE, A1941, HN2A26FS, HN2C01FE, HN2C01FU, HN2C26FS, HN3A51F, HN3A56F, HN3B01F, HN3B02FU

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