All Transistors. HN2C26FS Datasheet

 

HN2C26FS Datasheet and Replacement


   Type Designator: HN2C26FS
   SMD Transistor Code: NF_NH
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 0.95 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: FS6
 

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HN2C26FS Datasheet (PDF)

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HN2C26FS

HN2C26FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN2C26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) 1.00.05package 0.80.05 0.10.050.10.05 High voltage : VCEO = 50 V High current : IC = 100 mA (max) High hFE : hFE = 120 to 400 1 6 Excellent hFE

Datasheet: HN1C05FE , HN1C07F , HN1C26FS , HN2A01FE , HN2A01FU , HN2A26FS , HN2C01FE , HN2C01FU , S8050 , HN3A51F , HN3A56F , HN3B01F , HN3B02FU , HN3C51F , HN3C56FU , HN3C61FU , HN3C67FE .

History: RN2609

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