HN2C26FS Specs and Replacement
Type Designator: HN2C26FS
SMD Transistor Code: NF_NH
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 0.95 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: FS6
HN2C26FS Substitution
- BJT ⓘ Cross-Reference Search
HN2C26FS datasheet
HN2C26FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN2C26FS Frequency General-Purpose Amplifier Applications Unit mm Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) 1.0 0.05 package 0.8 0.05 0.1 0.05 0.1 0.05 High voltage VCEO = 50 V High current IC = 100 mA (max) High hFE hFE = 120 to 400 1 6 Excellent hFE... See More ⇒
Detailed specifications: HN1C05FE, HN1C07F, HN1C26FS, HN2A01FE, HN2A01FU, HN2A26FS, HN2C01FE, HN2C01FU, 13003, HN3A51F, HN3A56F, HN3B01F, HN3B02FU, HN3C51F, HN3C56FU, HN3C61FU, HN3C67FE
Keywords - HN2C26FS pdf specs
HN2C26FS cross reference
HN2C26FS equivalent finder
HN2C26FS pdf lookup
HN2C26FS substitution
HN2C26FS replacement
