HN3A51F Specs and Replacement
Type Designator: HN3A51F
SMD Transistor Code: 48
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SM6
HN3A51F Substitution
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HN3A51F datasheet
HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN3A51F Unit mm Audio Frequency General Purpose Amplifier Applications High voltage VCEO = -120V High hFE hFE = 200 700 Excellent hFE linearity hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Low noise NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Sy... See More ⇒
HN3A56F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN3A56F Unit mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO =-50V, IC = -150mA (max) High hFE hFE = 70 400 Excellent hFE linearity hFE (IC = -0.1mA) / (IC = -2mA) = 0.95 (typ.) Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) ... See More ⇒
Detailed specifications: HN1C07F, HN1C26FS, HN2A01FE, HN2A01FU, HN2A26FS, HN2C01FE, HN2C01FU, HN2C26FS, 2SD1047, HN3A56F, HN3B01F, HN3B02FU, HN3C51F, HN3C56FU, HN3C61FU, HN3C67FE, HN4A06J
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