HN3A51F Datasheet, Equivalent, Cross Reference Search
Type Designator: HN3A51F
SMD Transistor Code: 48
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SM6
HN3A51F Transistor Equivalent Substitute - Cross-Reference Search
HN3A51F Datasheet (PDF)
hn3a51f.pdf
HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN3A51F Unit: mmAudio Frequency General Purpose Amplifier Applications High voltage : VCEO = -120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Low noise : NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Sy
hn3a56f.pdf
HN3A56F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN3A56F Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO =-50V, IC = -150mA (max) High hFE : hFE = 70~400 Excellent hFE linearity : hFE (IC = -0.1mA) / (IC = -2mA) = 0.95 (typ.) Maximum Ratings (Ta = 25C) (Q1, Q2 Common)
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SD5076
