All Transistors. HN3B02FU Datasheet

 

HN3B02FU Datasheet and Replacement


   Type Designator: HN3B02FU
   SMD Transistor Code: 5B
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 120 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: US6
 

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HN3B02FU Datasheet (PDF)

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HN3B02FU

HN3B02FU TENTATIVE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) HN3B02FU Audio Frequency General Purpose Amplifier Applications Unit: mmQ1 High voltage : VCEO = -50V High current : I = -150mA (max) C High h : h = 120~400 FE FE Excellent h linearity : h (I = -0.1mA) / (I = -2mA) = 0.95 FE FE C C(typ.) Q2 High voltage : V = 60V CEO Hi

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HN3B02FU

Datasheet: HN2A01FU , HN2A26FS , HN2C01FE , HN2C01FU , HN2C26FS , HN3A51F , HN3A56F , HN3B01F , BC327 , HN3C51F , HN3C56FU , HN3C61FU , HN3C67FE , HN4A06J , HN4A08J , HN4A51J , HN4A56JU .

History: KSD471A | A1241 | FC115 | 2SB806KP

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