All Transistors. HN3B02FU Datasheet

 

HN3B02FU Datasheet and Replacement


   Type Designator: HN3B02FU
   SMD Transistor Code: 5B
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 120 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: US6
 

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HN3B02FU Datasheet (PDF)

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HN3B02FU

HN3B02FU TENTATIVE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) HN3B02FU Audio Frequency General Purpose Amplifier Applications Unit: mmQ1 High voltage : VCEO = -50V High current : I = -150mA (max) C High h : h = 120~400 FE FE Excellent h linearity : h (I = -0.1mA) / (I = -2mA) = 0.95 FE FE C C(typ.) Q2 High voltage : V = 60V CEO Hi

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HN3B02FU

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SA1037-Q | MP1551 | 2SB1037R | CSD794O | 2SA89 | BUXD87 | CT1462

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