HN3B02FU Specs and Replacement
Type Designator: HN3B02FU
SMD Transistor Code: 5B
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Package: US6
HN3B02FU Substitution
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HN3B02FU datasheet
HN3B02FU TENTATIVE TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT Process) HN3B02FU Audio Frequency General Purpose Amplifier Applications Unit mm Q1 High voltage VCEO = -50V High current I = -150mA (max) C High h h = 120 400 FE FE Excellent h linearity h (I = -0.1mA) / (I = -2mA) = 0.95 FE FE C C (typ.) Q2 High voltage V = 60V CEO Hi... See More ⇒
Detailed specifications: HN2A01FU, HN2A26FS, HN2C01FE, HN2C01FU, HN2C26FS, HN3A51F, HN3A56F, HN3B01F, BC327, HN3C51F, HN3C56FU, HN3C61FU, HN3C67FE, HN4A06J, HN4A08J, HN4A51J, HN4A56JU
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