All Transistors. HN3C51F Datasheet

 

HN3C51F Datasheet and Replacement


   Type Designator: HN3C51F
   SMD Transistor Code: DG_DL
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SM6
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HN3C51F Datasheet (PDF)

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HN3C51F

HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C51F Unit: mmAudio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector-base vo

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HN3C51F

HN3C56FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C56FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1,

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC3489 | CFD1499P | RT2P01M | DTA114TMFHA | CTP1732 | CP502 | 40459

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