HN3C51F Specs and Replacement

Type Designator: HN3C51F

SMD Transistor Code: DG_DL

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SM6

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HN3C51F datasheet

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HN3C51F

HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C51F Unit mm Audio Frequency General Purpose Amplifier Applications High voltage VCEO = 120V High hFE hFE = 200 700 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base vo... See More ⇒

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HN3C51F

HN3C56FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C56FU Unit mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, ... See More ⇒

Detailed specifications: HN2A26FS, HN2C01FE, HN2C01FU, HN2C26FS, HN3A51F, HN3A56F, HN3B01F, HN3B02FU, A733, HN3C56FU, HN3C61FU, HN3C67FE, HN4A06J, HN4A08J, HN4A51J, HN4A56JU, HN4B01JE

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