HN3C61FU Specs and Replacement

Type Designator: HN3C61FU

SMD Transistor Code: 39

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: US6

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HN3C61FU datasheet

 ..1. Size:194K  toshiba

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HN3C61FU

HN3C61FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C61FU Unit mm Ultra High Speed Switching Application Computer, Counter Applications. High Transition Frequency fT = 400MHz(Typ.) VCE(sat) = 0.3V(Max.) Low Saturation Voltage High Speed Switching Time tstg = 15ns(Typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symb... See More ⇒

 9.1. Size:195K  toshiba

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HN3C61FU

HN3C67FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C67FE Unit mm Audio Frequency Amplifier Applications AM Amplifier Applications Small package (dual type) High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) ... See More ⇒

Detailed specifications: HN2C01FU, HN2C26FS, HN3A51F, HN3A56F, HN3B01F, HN3B02FU, HN3C51F, HN3C56FU, 2SC4793, HN3C67FE, HN4A06J, HN4A08J, HN4A51J, HN4A56JU, HN4B01JE, HN4B04J, HN4B06J

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