HN4A51J Specs and Replacement

Type Designator: HN4A51J

SMD Transistor Code: 34

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SMV

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HN4A51J datasheet

 ..1. Size:306K  toshiba

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HN4A51J

HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A51J Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -120V High hFE hFE = 200 700 Excellent hFE linearity hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Low noise NF = 1dB (typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Sym... See More ⇒

 9.1. Size:188K  toshiba

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HN4A51J

HN4A56JU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A56JU Unit mm Audio Frequency General Purpose Amplifier Applications Small Package (Dual Type) High Voltage and High Current VCEO= -50V, IC = -150mA(MAX.) High hFE Excellent hFE Linearity hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common... See More ⇒

Detailed specifications: HN3B01F, HN3B02FU, HN3C51F, HN3C56FU, HN3C61FU, HN3C67FE, HN4A06J, HN4A08J, A940, HN4A56JU, HN4B01JE, HN4B04J, HN4B06J, HN4C05JU, HN4C06J, HN4C08J, HN4C51J

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