HN4B01JE Specs and Replacement
Type Designator: HN4B01JE
SMD Transistor Code: 52
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Package: ESV
HN4B01JE Substitution
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HN4B01JE datasheet
HN4B01JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN4B01JE Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2 High voltage and ... See More ⇒
HN4B04J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN4B04J Unit mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1 Excellent hFE linearity hFE(2) =25 (Min.) at VCE = -6V IC = -400mA Q2 Excellent hFE linearity hFE(2) =25 (Min.) at VCE = 6V ... See More ⇒
HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN4B06J Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage VCEO = -120V High hFE hFE = 200 700 Excellent hFE linearity hFE (IC = -0.1mA) / hFE (IC =- 2mA) = 0.95 (typ.) Q2 High voltage VCEO = 120V High hFE hFE = 200 7... See More ⇒
Detailed specifications: HN3C51F, HN3C56FU, HN3C61FU, HN3C67FE, HN4A06J, HN4A08J, HN4A51J, HN4A56JU, 2SA1837, HN4B04J, HN4B06J, HN4C05JU, HN4C06J, HN4C08J, HN4C51J, RN1101ACT, RN1101CT
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