HN4C06J Specs and Replacement
Type Designator: HN4C06J
SMD Transistor Code: DG
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SMV
HN4C06J Substitution
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HN4C06J datasheet
HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C06J Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = 120V High hFE hFE = 200 700 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Low noise NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol... See More ⇒
HN4C08J TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C08J Unit mm Low Frequency Power Amplifer Applications Power Switching Application High DC Current Gain hFE = 100 320 Low Saturation Voltage VCE(sat)=0.4V (Max.) (IC = 500mA , IB = 20mA) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base vol... See More ⇒
HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C05JU Low Frequency Amplifier Applications Unit mm Muting Applications Switching Applications Low Saturation Voltage VCE(sat)(1)=15mV (Typ.) @ IC = 10mA/ IB = 0.5mA) High Collector Current IC=400mA(Max.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Co... See More ⇒
Detailed specifications: HN4A06J, HN4A08J, HN4A51J, HN4A56JU, HN4B01JE, HN4B04J, HN4B06J, HN4C05JU, 8050, HN4C08J, HN4C51J, RN1101ACT, RN1101CT, RN1101FS, RN1101MFV, RN1101, RN1102ACT
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