HN4C08J Datasheet, Equivalent, Cross Reference Search
Type Designator: HN4C08J
SMD Transistor Code: 35
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SMV
HN4C08J Transistor Equivalent Substitute - Cross-Reference Search
HN4C08J Datasheet (PDF)
hn4c08j.pdf
HN4C08J TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C08J Unit: mmLow Frequency Power Amplifer Applications Power Switching Application High DC Current Gain : hFE = 100~320 Low Saturation Voltage : VCE(sat)=0.4V (Max.) : (IC = 500mA , IB = 20mA) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector-base vol
hn4c06j.pdf
HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C06J Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Low noise : NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol
hn4c05ju.pdf
HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C05JU Low Frequency Amplifier Applications Unit: mmMuting Applications Switching Applications Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) High Collector Current :IC=400mA(Max.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCo
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
