HN4C51J Specs and Replacement

Type Designator: HN4C51J

SMD Transistor Code: 33

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SMV

 HN4C51J Substitution

- BJT ⓘ Cross-Reference Search

 

HN4C51J datasheet

 ..1. Size:293K  toshiba

 hn4c51j.pdf pdf_icon

HN4C51J

HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C51J Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = 120V High hFE hFE = 200 700 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Low noise NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol... See More ⇒

Detailed specifications: HN4A51J, HN4A56JU, HN4B01JE, HN4B04J, HN4B06J, HN4C05JU, HN4C06J, HN4C08J, TIP31, RN1101ACT, RN1101CT, RN1101FS, RN1101MFV, RN1101, RN1102ACT, RN1102CT, RN1102FS

Keywords - HN4C51J pdf specs

 HN4C51J cross reference

 HN4C51J equivalent finder

 HN4C51J pdf lookup

 HN4C51J substitution

 HN4C51J replacement