All Transistors. HN4C51J Datasheet

 

HN4C51J Datasheet and Replacement


   Type Designator: HN4C51J
   SMD Transistor Code: 33
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SMV
 

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HN4C51J Datasheet (PDF)

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HN4C51J

HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C51J Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Low noise : NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol

Datasheet: HN4A51J , HN4A56JU , HN4B01JE , HN4B04J , HN4B06J , HN4C05JU , HN4C06J , HN4C08J , 2SD2499 , RN1101ACT , RN1101CT , RN1101FS , RN1101MFV , RN1101 , RN1102ACT , RN1102CT , RN1102FS .

History: DT61-500 | 2SC2532 | MMUN2135 | 2SC2537 | BC857BFZ | TI616 | DTC304

Keywords - HN4C51J transistor datasheet

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