2N1170 Specs and Replacement

Type Designator: 2N1170

Material of Transistor: Ge

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 40 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO5

 2N1170 Substitution

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Detailed specifications: 2N1165A, 2N1166, 2N1166A, 2N1167, 2N1167A, 2N1168, 2N1169, 2N117, C1815, 2N1171, 2N1172, 2N1173, 2N1174, 2N1175, 2N1175A, 2N1175B, 2N1176

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