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RN1118MFV Specs and Replacement


   Type Designator: RN1118MFV
   SMD Transistor Code: XW
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 4.7
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 25 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT723 VESM
 

 RN1118MFV Substitution

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RN1118MFV detailed specifications

 ..1. Size:174K  toshiba
rn1114mfv rn1115mfv rn1116mfv rn1117mfv rn1118mfv.pdf pdf_icon

RN1118MFV

RN1114MFV RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114MFV,RN1115MFV,RN1116MFV,RN1117MFV,RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Unit mm Driver Circuit Applications 1.2 0.05 With built-in bias resistors 0.80 0.05 Simplify circuit design Reduce a quantity of parts and manufac... See More ⇒

 8.1. Size:207K  toshiba
rn1114 rn1118.pdf pdf_icon

RN1118MFV

RN1114 RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114, RN1115, RN1116, RN1117, RN1118 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2114 to 2118 Equivalent Circuit a... See More ⇒

 8.2. Size:160K  toshiba
rn1114-rn1118.pdf pdf_icon

RN1118MFV

RN1114 RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114,RN1115,RN1116,RN1117,RN1118 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114 2118 Equivalent Circuit and Bias Resistor ... See More ⇒

 8.3. Size:209K  toshiba
rn1114f rn1118f.pdf pdf_icon

RN1118MFV

RN1114F RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114F to 2118F Equivalent Circuit and Bi... See More ⇒

Detailed specifications: RN1116MFV , RN1116 , RN1117FT , RN1117F , RN1117MFV , RN1117 , RN1118FT , RN1118F , 2SD1047 , RN1118 , RN1119MFV , RN1130MFV , RN1131MFV , RN1132MFV , RN1301 , RN1302 , RN1303 .

Keywords - RN1118MFV transistor specs

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