RN1317
Datasheet, Equivalent, Cross Reference Search
Type Designator: RN1317
SMD Transistor Code: XU
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 15
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT323
SC70
USM
RN1317
Transistor Equivalent Substitute - Cross-Reference Search
RN1317
Datasheet (PDF)
..1. Size:455K toshiba
rn1314 rn1315 rn1316 rn1317 rn1318.pdf
RN1314RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2314~RN2318 Equivalent Circuit and Bias Res
9.1. Size:159K toshiba
rn1314-rn1318.pdf
RN1314RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2314~RN2318 Equivalent Circuit and Bias Res
9.2. Size:261K toshiba
rn1310 rn1311.pdf
RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1310,RN1311 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2310 and RN2311 Equivalent Circui
9.3. Size:287K toshiba
rn1312 rn1313.pdf
RN1312,RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1312,RN1313 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2312, RN2313 Equivalent Circuit Absolute Maximum Ratings (Ta = 25
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
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, 2N3211
.