RN1325A Specs and Replacement
Type Designator: RN1325A
SMD Transistor Code: QE
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 0.47 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SOT323 SC70 USM
RN1325A Substitution
RN1325A detailed specifications
9.1. Size:191K toshiba
rn1321a rn1327a.pdf
rn1321a rn1327a.pdf
RN1321A RN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications High current driving is possible. Since bias resisters are built in the transistor,the miniaturization of the apparatus by curtailment of the number of p... See More ⇒
Detailed specifications: RN1315 , RN1316 , RN1317 , RN1318 , RN1321A , RN1322A , RN1323A , RN1324A , 2SC945 , RN1326A , RN1327A , RN1401 , RN1402 , RN1403 , RN1404 , RN1405 , RN1406 .
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