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RN1327A Specs and Replacement


   Type Designator: RN1327A
   SMD Transistor Code: QG
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: SOT323 SC70 USM
 

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RN1327A detailed specifications

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RN1327A

RN1321A RN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications High current driving is possible. Since bias resisters are built in the transistor,the miniaturization of the apparatus by curtailment of the number of p... See More ⇒

Detailed specifications: RN1317 , RN1318 , RN1321A , RN1322A , RN1323A , RN1324A , RN1325A , RN1326A , 2SB817 , RN1401 , RN1402 , RN1403 , RN1404 , RN1405 , RN1406 , RN1407 , RN1408 .

History: 3DA75C | 3DA5038

Keywords - RN1327A transistor specs

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