RN1425 Datasheet. Specs and Replacement

Type Designator: RN1425  📄📄 

SMD Transistor Code: QE

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 0.47 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.047

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SOT346 SC59 SMINI

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RN1425 datasheet

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RN1425

RN1421 RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications High current type (IC (max) = 800mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and... See More ⇒

Detailed specifications: RN1415, RN1416, RN1417, RN1418, RN1421, RN1422, RN1423, RN1424, MPSA42, RN1426, RN1427, RN1441, RN1442, RN1443, RN1444, RN1501, RN1502

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