RN1441 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN1441
SMD Transistor Code: KA_KB
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 5.6 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 4.8 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT346 SC59 SMINI
RN1441 Transistor Equivalent Substitute - Cross-Reference Search
RN1441 Datasheet (PDF)
rn1441-1444.pdf
RN1441RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm High emitter-base voltage: VEBO = 25V (min) High reverse h : reverse h = 150 (typ.) (V = -2V, I = -4mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5mA) ON B With built-in bias resistors Simplify circuit design
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .