RN1502 Datasheet. Specs and Replacement

Type Designator: RN1502  📄📄 

SMD Transistor Code: XB

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT25 SC74A SMV

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RN1502 datasheet

 9.1. Size:146K  toshiba

 rn1501-1506.pdf pdf_icon

RN1502

RN1501 RN1506 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1501,RN1502,RN1503 RN1504,RN1505,RN1506 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process ... See More ⇒

 9.2. Size:134K  toshiba

 rn1507-1509.pdf pdf_icon

RN1502

RN1507 RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1507,RN1508,RN1509 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to ... See More ⇒

Detailed specifications: RN1425, RN1426, RN1427, RN1441, RN1442, RN1443, RN1444, RN1501, TIP120, RN1503, RN1504, RN1505, RN1506, RN1507, RN1508, RN1509, RN1510

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