All Transistors. RN1610 Datasheet

 

RN1610 Datasheet and Replacement


   Type Designator: RN1610
   SMD Transistor Code: XK
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT26 SC74 SM6
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RN1610 Datasheet (PDF)

 0.1. Size:116K  toshiba
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RN1610

RN1610,RN1611 TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) RN1610,RN1611 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2610, R

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SA1051A | BCX5510TA | 2SB464 | MMBT4122 | 2SA1463 | 2SA843 | 2N1963

Keywords - RN1610 transistor datasheet

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