RN1673 Datasheet. Specs and Replacement

Type Designator: RN1673  📄📄 

SMD Transistor Code: XXP

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT26 SC74 SM6

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RN1673 datasheet

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RN1673

RN1673 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1673 Switching Applications Unit mm Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a Super-Mini (6 pin) package Incorporating a bias resistor into a transistor reduces parts count. Reducing... See More ⇒

Detailed specifications: RN1604, RN1605, RN1606, RN1607, RN1608, RN1609, RN1610, RN1611, S8050, RN16J1, RN1701JE, RN1701, RN1702JE, RN1702, RN1703JE, RN1703, RN1704JE

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