RN1673 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN1673
SMD Transistor Code: XXP
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT26 SC74 SM6
RN1673 Transistor Equivalent Substitute - Cross-Reference Search
RN1673 Datasheet (PDF)
..1. Size:211K toshiba
rn1673 090512.pdf
rn1673 090512.pdf
RN1673 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1673 Switching Applications Unit: mmInverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a Super-Mini (6 pin) package Incorporating a bias resistor into a transistor reduces parts count. Reducing
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
