RN1710JE Datasheet. Specs and Replacement

Type Designator: RN1710JE  📄📄 

SMD Transistor Code: XK

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT553 ESV

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RN1710JE datasheet

 0.1. Size:110K  toshiba

 rn1710je-rn1711je.pdf pdf_icon

RN1710JE

RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1710JE,RN1711JE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing ... See More ⇒

 8.1. Size:110K  toshiba

 rn1710-rn1711.pdf pdf_icon

RN1710JE

RN1710,RN1711 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1710,RN1711 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2... See More ⇒

Detailed specifications: RN1706JE, RN1706, RN1707JE, RN1707, RN1708JE, RN1708, RN1709JE, RN1709, BC327, RN1710, RN1711JE, RN1711, RN1901AFS, RN1901FE, RN1901FS, RN1901, RN1902AFS

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