All Transistors. RN1711JE Datasheet

 

RN1711JE Datasheet and Replacement


   Type Designator: RN1711JE
   SMD Transistor Code: XM
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT553 ESV
 

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RN1711JE Datasheet (PDF)

 0.1. Size:110K  toshiba
 rn1710je-rn1711je.pdf pdf_icon

RN1711JE

RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1710JE,RN1711JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing

 8.1. Size:110K  toshiba
 rn1710-rn1711.pdf pdf_icon

RN1711JE

RN1710,RN1711 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1710,RN1711 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2

Datasheet: RN1707JE , RN1707 , RN1708JE , RN1708 , RN1709JE , RN1709 , RN1710JE , RN1710 , A940 , RN1711 , RN1901AFS , RN1901FE , RN1901FS , RN1901 , RN1902AFS , RN1902FE , RN1902FS .

History: 2SC3772 | U2TA510 | PDTA115TE | BC179AP | BC449-5

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