All Transistors. RN1901AFS Datasheet

 

RN1901AFS Datasheet, Equivalent, Cross Reference Search


   Type Designator: RN1901AFS
   SMD Transistor Code: C0
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT963 FS6

 RN1901AFS Transistor Equivalent Substitute - Cross-Reference Search

   

RN1901AFS Datasheet (PDF)

 ..1. Size:173K  toshiba
rn1901afs rn1906afs.pdf

RN1901AFS
RN1901AFS

RN1901AFS~RN1906AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1901AFS, RN1902AFS, RN1903AFS RN1904AFS, RN1905AFS, RN1906AFS Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, Small-Mold (6-pi

 8.1. Size:465K  toshiba
rn1901 rn1906.pdf

RN1901AFS
RN1901AFS

RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a qu

 8.2. Size:133K  toshiba
rn1901fs rn1906fs.pdf

RN1901AFS
RN1901AFS

RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1

 8.3. Size:543K  toshiba
rn1901fe rn1906fe.pdf

RN1901AFS
RN1901AFS

RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1901FE, RN1902FE, RN1903FE RN1904FE, RN1905FE, RN1906FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a t

 8.4. Size:194K  toshiba
rn1901fe-1906fe.pdf

RN1901AFS
RN1901AFS

RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1901FE,RN1902FE,RN1903FE RN1904FE,RN1905FE,RN1906FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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