RN1961FE Datasheet. Specs and Replacement

Type Designator: RN1961FE  📄📄 

SMD Transistor Code: XXA

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT563 ES6

  📄📄 Copy 

 RN1961FE Substitution

- BJT ⓘ Cross-Reference Search

 

RN1961FE datasheet

 ..1. Size:544K  toshiba

rn1961fe rn1966fe.pdf pdf_icon

RN1961FE

RN1961FE RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans... See More ⇒

 0.1. Size:193K  toshiba

rn1961fe-rn1966fe.pdf pdf_icon

RN1961FE

RN1961FE RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans... See More ⇒

 7.1. Size:130K  toshiba

rn1961fs rn1962fs rn1963fs rn1964fs rn1965fs rn1966fs.pdf pdf_icon

RN1961FE

RN1961FS RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FS,RN1962FS,RN1963FS RN1964FS,RN1965FS,RN1966FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1... See More ⇒

 8.1. Size:191K  toshiba

rn1961ct rn1966ct.pdf pdf_icon

RN1961FE

RN1961CT RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Unit mm Inverter Circuit Applications 1.0 0.05 0.15 0.03 Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Sma... See More ⇒

Detailed specifications: RN1911FE, RN1911FS, RN1911, RN1912AFS, RN1912FS, RN1913AFS, RN1913FS, RN1961CT, S9018, RN1961FS, RN1961, RN1962CT, RN1962FE, RN1962FS, RN1962, RN1963CT, RN1963FE

Keywords - RN1961FE pdf specs

 RN1961FE cross reference

 RN1961FE equivalent finder

 RN1961FE pdf lookup

 RN1961FE substitution

 RN1961FE replacement