All Transistors. RN1969FE Datasheet

 

RN1969FE Datasheet and Replacement


   Type Designator: RN1969FE
   SMD Transistor Code: XXJ
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT563 ES6
 

 RN1969FE Substitution

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RN1969FE Datasheet (PDF)

 0.1. Size:147K  toshiba
rn1967fe-rn1969fe.pdf pdf_icon

RN1969FE

RN1967FE~RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FE,RN1968FE,RN1969FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count.

 7.1. Size:107K  toshiba
rn1967fs rn1968fs rn1969fs.pdf pdf_icon

RN1969FE

RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm1.00.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) 0.80.05 0.10.050.10.05package. Incorporating a bias resis

 8.1. Size:136K  toshiba
rn1967-rn1969.pdf pdf_icon

RN1969FE

RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1967,RN1968,RN1969 Unit:mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN

 8.2. Size:145K  toshiba
rn1967ct rn1968ct rn1969ct.pdf pdf_icon

RN1969FE

RN1967CT~RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Unit: mm1.00.05Inverter Circuit Applications 0.150.03Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Small Mold (6 pin)

Datasheet: RN1967FE , RN1967FS , RN1967 , RN1968CT , RN1968FE , RN1968FS , RN1968 , RN1969CT , 2SD718 , RN1969FS , RN1969 , RN1970CT , RN1970FE , RN1970FS , RN1970 , RN1971CT , RN1971FE .

History: 2SD1692Y | NB121HJ | KSB707R | 2N1209

Keywords - RN1969FE transistor datasheet

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