All Transistors. RN1973HFE Datasheet

 

RN1973HFE Datasheet and Replacement


   Type Designator: RN1973HFE
   SMD Transistor Code: XX4
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT563 ES6
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RN1973HFE Datasheet (PDF)

 ..1. Size:144K  toshiba
rn1972hfe rn1973hfe.pdf pdf_icon

RN1973HFE

RN1972HFE,RN1973HFE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1972HFE,RN1973HFE Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reduc

 8.1. Size:118K  toshiba
rn1972fs rn1973fs.pdf pdf_icon

RN1973HFE

RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mmTwo devices are incorporated into a fine pitch small mold (6-pin) package 1.00.050.80.05 0.10.050.10.05 Incorporating a bias resistor into a transi

 8.2. Size:176K  toshiba
rn1972ct rn1973ct.pdf pdf_icon

RN1973HFE

RN1972CT,RN1973CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1972CT,RN1973CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.150.03 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bias resistor i

 8.3. Size:98K  toshiba
rn1973.pdf pdf_icon

RN1973HFE

RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications. Two devices are incorporated into an Ultra-Super-Mini (6-pin) package Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enable

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