RN2103CT Datasheet and Replacement
Type Designator: RN2103CT
SMD Transistor Code: U2
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT883 CST3
RN2103CT Transistor Equivalent Substitute - Cross-Reference Search
RN2103CT Datasheet (PDF)
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RN2101FS RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 0.15 0.05 0.2 0.05 Incorporating a bias resistor into a transistor reduces parts count. 0.35 0.05 0.6 0.05 Red... See More ⇒
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Datasheet: RN2101MFV , RN2101 , RN2102ACT , RN2102CT , RN2102FS , RN2102MFV , RN2102 , RN2103ACT , 8050 , RN2103FS , RN2103MFV , RN2103 , RN2104ACT , RN2104CT , RN2104FS , RN2104MFV , RN2104 .
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