RN2103CT
Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2103CT
SMD Transistor Code: U2
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.05
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 1.2
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT883
CST3
RN2103CT
Transistor Equivalent Substitute - Cross-Reference Search
RN2103CT
Datasheet (PDF)
8.1. Size:167K toshiba
rn2101fs rn2102fs rn2103fs rn2104fs rn2105fs rn2106fs.pdf
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8.2. Size:256K toshiba
rn2101 rn2102 rn2103 rn2104 rn2105 rn2106.pdf
RN2101RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101,RN2102,RN2103 RN2104,RN2105,RN2106 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1101~RN1106 Equivalent Circuit and B
8.3. Size:200K toshiba
rn2101mfv rn2102mfv rn2103mfv rn2104mfv rn2105mfv rn2106mfv.pdf
RN2101MFVRN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.2 0.050.80 0.05 Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the
Datasheet: 2SA1771
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