All Transistors. RN2106FS Datasheet

 

RN2106FS Datasheet and Replacement


   Type Designator: RN2106FS
   SMD Transistor Code: U5
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: FSM
 

 RN2106FS Substitution

   - BJT ⓘ Cross-Reference Search

   

RN2106FS Datasheet (PDF)

 ..1. Size:167K  toshiba
rn2101fs rn2102fs rn2103fs rn2104fs rn2105fs rn2106fs.pdf pdf_icon

RN2106FS

RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 0.150.05 0.20.05 Incorporating a bias resistor into a transistor reduces parts count. 0.350.05 0.60.05 Red

 7.1. Size:194K  toshiba
rn2101f-rn2106f.pdf pdf_icon

RN2106FS

RN2101FRN2106F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101F,RN2102F,RN2103F RN2104F,RN2105F,RN2106F Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1101F~RN1106F Equivalent Cir

 7.2. Size:201K  toshiba
rn2101ft-rn2106ft.pdf pdf_icon

RN2106FS

RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor

 8.1. Size:188K  toshiba
rn2101ct rn2106ct.pdf pdf_icon

RN2106FS

RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Unit: mmInverter Circuit Applications 0.60.050.50.03Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces p

Datasheet: RN2104 , RN2105ACT , RN2105CT , RN2105FS , RN2105MFV , RN2105 , RN2106ACT , RN2106CT , 8550 , RN2106MFV , RN2106 , RN2107ACT , RN2107CT , RN2107FS , RN2107MFV , RN2107 , RN2108ACT .

Keywords - RN2106FS transistor datasheet

 RN2106FS cross reference
 RN2106FS equivalent finder
 RN2106FS lookup
 RN2106FS substitution
 RN2106FS replacement

 

 
Back to Top

 


 
.