All Transistors. RN2106MFV Datasheet

 

RN2106MFV Datasheet and Replacement


   Type Designator: RN2106MFV
   SMD Transistor Code: YF.
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 0.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT723 VESM

 RN2106MFV Transistor Equivalent Substitute - Cross-Reference Search

   

RN2106MFV Datasheet (PDF)

 ..1. Size:200K  toshiba
rn2101mfv rn2102mfv rn2103mfv rn2104mfv rn2105mfv rn2106mfv.pdf pdf_icon

RN2106MFV

RN2101MFV RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.2 0.05 0.80 0.05 Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the ... See More ⇒

 8.1. Size:188K  toshiba
rn2101ct rn2106ct.pdf pdf_icon

RN2106MFV

RN2101CT RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 0.5 0.03 Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces p... See More ⇒

 8.2. Size:189K  toshiba
rn2101act rn2106act.pdf pdf_icon

RN2106MFV

RN2101ACT RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 0.6 0.05 0.5 0.03 Extra small package (CST3) is applicable for extra high density fabrication. Inc... See More ⇒

 8.3. Size:167K  toshiba
rn2101fs rn2102fs rn2103fs rn2104fs rn2105fs rn2106fs.pdf pdf_icon

RN2106MFV

RN2101FS RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 0.15 0.05 0.2 0.05 Incorporating a bias resistor into a transistor reduces parts count. 0.35 0.05 0.6 0.05 Red... See More ⇒

Datasheet: RN2105ACT , RN2105CT , RN2105FS , RN2105MFV , RN2105 , RN2106ACT , RN2106CT , RN2106FS , D880 , RN2106 , RN2107ACT , RN2107CT , RN2107FS , RN2107MFV , RN2107 , RN2108ACT , RN2108CT .

History: MJD210T4G | HA7534 | MJD253T4G | 2SC382R

Keywords - RN2106MFV transistor datasheet

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