RN2106MFV Datasheet. Specs and Replacement
Type Designator: RN2106MFV 📄📄
SMD Transistor Code: YF.
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 80
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RN2106MFV Substitution
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RN2106MFV datasheet
rn2101mfv rn2102mfv rn2103mfv rn2104mfv rn2105mfv rn2106mfv.pdf ![]()
RN2101MFV RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.2 0.05 0.80 0.05 Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the ... See More ⇒
RN2101CT RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 0.5 0.03 Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces p... See More ⇒
RN2101ACT RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 0.6 0.05 0.5 0.03 Extra small package (CST3) is applicable for extra high density fabrication. Inc... See More ⇒
rn2101fs rn2102fs rn2103fs rn2104fs rn2105fs rn2106fs.pdf ![]()
RN2101FS RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 0.15 0.05 0.2 0.05 Incorporating a bias resistor into a transistor reduces parts count. 0.35 0.05 0.6 0.05 Red... See More ⇒
Detailed specifications: RN2105ACT, RN2105CT, RN2105FS, RN2105MFV, RN2105, RN2106ACT, RN2106CT, RN2106FS, D880, RN2106, RN2107ACT, RN2107CT, RN2107FS, RN2107MFV, RN2107, RN2108ACT, RN2108CT
Keywords - RN2106MFV pdf specs
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BJT Parameters and How They Relate
History: RN1442 | NTE267 | RN1904AFS | RN2104ACT | KRC822F | NSS40200UW6T1G | BDX14
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