All Transistors. RN2109CT Datasheet

 

RN2109CT Datasheet, Equivalent, Cross Reference Search


   Type Designator: RN2109CT
   SMD Transistor Code: U8
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT883 CST3

 RN2109CT Transistor Equivalent Substitute - Cross-Reference Search

   

RN2109CT Datasheet (PDF)

 ..1. Size:144K  toshiba
rn2107ct rn2109ct.pdf

RN2109CT
RN2109CT

RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107CT,RN2108CT,RN2109CT Switching Applications Unit: mmInverter Circuit Applications Top View Interface Circuit Applications 0.60.050.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.

 8.1. Size:177K  toshiba
rn2107 rn2108 rn2109.pdf

RN2109CT
RN2109CT

RN2107RN2109 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107,RN2108,RN2109 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107~RN1109 Equivalent Circuit and Bias Resister Values T

 8.2. Size:162K  toshiba
rn2107fs rn2108fs rn2109fs.pdf

RN2109CT
RN2109CT

RN2107FS~RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equip

 8.3. Size:146K  toshiba
rn2107ft-rn2109ft.pdf

RN2109CT
RN2109CT

RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces p

 8.4. Size:194K  toshiba
rn2107mfv rn2108mfv rn2109mfv.pdf

RN2109CT
RN2109CT

RN2107MFVRN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Ultra-small package, suited to very high density mounting 1.20.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0.80.05enabling the ma

 8.5. Size:326K  toshiba
rn2107f rn2109f.pdf

RN2109CT
RN2109CT

RN2107FRN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F~RN1109F Equivalent Circuit and Bias Resister Valu

 8.6. Size:82K  toshiba
rn2107f-rn2109f.pdf

RN2109CT
RN2109CT

RN2107FRN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F~RN1109F Equivalent Circuit and Bias Resister V

 8.7. Size:144K  toshiba
rn2107act rn2109act.pdf

RN2109CT
RN2109CT

RN2107ACT~RN2109ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107ACT,RN2108ACT,RN2109ACT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Top View 0.60.050.50.03 Extra small package (CST3) is applicable for extra high density fabrication. Incorporating a bias resistor

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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