All Transistors. RN2111ACT Datasheet

 

RN2111ACT Datasheet and Replacement


   Type Designator: RN2111ACT
   SMD Transistor Code: CF
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT883 CST3
      - BJT Cross-Reference Search

   

RN2111ACT Datasheet (PDF)

 ..1. Size:152K  toshiba
rn2110act rn2111act.pdf pdf_icon

RN2111ACT

RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Extra small package (CST3) is applicable for extra high density fabrication. Incorpora

 8.1. Size:102K  toshiba
rn2110-rn2111.pdf pdf_icon

RN2111ACT

RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110, RN1111 Equivalent Circuit Maximum Ratings (Ta = 25C) Cha

 8.2. Size:163K  toshiba
rn2110mfv rn2111mfv.pdf pdf_icon

RN2111ACT

RN2110MFV,RN2111MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2110MFV,RN2111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Ultra-small package, suited to very high density mounting 1.20.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0

 8.3. Size:114K  toshiba
rn2110fs rn2111fs.pdf pdf_icon

RN2111ACT

RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save a

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BUR607D | MJ16018-1400V | MPS6601 | 2SC1075 | MJ13332 | L9015SLT3G | 2SC371R

Keywords - RN2111ACT transistor datasheet

 RN2111ACT cross reference
 RN2111ACT equivalent finder
 RN2111ACT lookup
 RN2111ACT substitution
 RN2111ACT replacement

 

 
Back to Top

 


 
.