RN2111ACT Datasheet. Specs and Replacement

Type Designator: RN2111ACT  📄📄 

SMD Transistor Code: CF

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.08 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 0.9 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT883 CST3

  📄📄 Copy 

 RN2111ACT Substitution

- BJT ⓘ Cross-Reference Search

 

RN2111ACT datasheet

 ..1. Size:152K  toshiba

rn2110act rn2111act.pdf pdf_icon

RN2111ACT

RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Extra small package (CST3) is applicable for extra high density fabrication. Incorpora... See More ⇒

 8.1. Size:102K  toshiba

rn2110-rn2111.pdf pdf_icon

RN2111ACT

RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110, RN1111 Equivalent Circuit Maximum Ratings (Ta = 25 C) Cha... See More ⇒

 8.2. Size:163K  toshiba

rn2110mfv rn2111mfv.pdf pdf_icon

RN2111ACT

RN2110MFV,RN2111MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2110MFV,RN2111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0... See More ⇒

 8.3. Size:114K  toshiba

rn2110fs rn2111fs.pdf pdf_icon

RN2111ACT

RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save a... See More ⇒

Detailed specifications: RN2109F, RN2109MFV, RN2109, RN2110ACT, RN2110CT, RN2110FS, RN2110MFV, RN2110, S9018, RN2111CT, RN2111FS, RN2111F, RN2111MFV, RN2111, RN2112ACT, RN2112CT, RN2112FS

Keywords - RN2111ACT pdf specs

 RN2111ACT cross reference

 RN2111ACT equivalent finder

 RN2111ACT pdf lookup

 RN2111ACT substitution

 RN2111ACT replacement