RN2426 Datasheet. Specs and Replacement

Type Designator: RN2426  📄📄 

SMD Transistor Code: RF

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SOT346 SC59 SMINI

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RN2426 datasheet

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RN2426

RN2421 RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications High current type (IC(MAX) = -800mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Low V CE (... See More ⇒

Detailed specifications: RN2416, RN2417, RN2418, RN2421, RN2422, RN2423, RN2424, RN2425, TIP2955, RN2427, RN2501, RN2502, RN2503, RN2504, RN2505, RN2506, RN2507

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