All Transistors. RN2426 Datasheet

 

RN2426 Datasheet, Equivalent, Cross Reference Search


   Type Designator: RN2426
   SMD Transistor Code: RF
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT346 SC59 SMINI

 RN2426 Transistor Equivalent Substitute - Cross-Reference Search

   

RN2426 Datasheet (PDF)

 9.1. Size:159K  toshiba
 rn2421-rn2427.pdf

RN2426 RN2426

RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications High current type (IC(MAX) = -800mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Low V CE (

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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