RN2506 Datasheet. Specs and Replacement

Type Designator: RN2506  📄📄 

SMD Transistor Code: YF

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT25 SC74A SMV

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RN2506 datasheet

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RN2506

RN2501 RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2501,RN2502,RN2503 RN2504,RN2505,RN2506 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process ... See More ⇒

 9.1. Size:137K  toshiba

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RN2506

RN2507 RN2509 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2507,RN2508,RN2509 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to ... See More ⇒

Detailed specifications: RN2425, RN2426, RN2427, RN2501, RN2502, RN2503, RN2504, RN2505, 2SC2383, RN2507, RN2508, RN2509, RN2510, RN2511, RN2601, RN2602, RN2603

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