RN2508 Datasheet and Replacement
Type Designator: RN2508
SMD Transistor Code: YI
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT25 SC74A SMV
RN2508 Substitution
RN2508 Datasheet (PDF)
rn2501-rn2506.pdf

RN2501~RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2501,RN2502,RN2503 RN2504,RN2505,RN2506 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
rn2507-rn2509.pdf

RN2507~RN2509 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2507,RN2508,RN2509 Switching, Inverter Circuit, Interface Circuit Unit in mmAnd Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to
Datasheet: RN2427 , RN2501 , RN2502 , RN2503 , RN2504 , RN2505 , RN2506 , RN2507 , A1266 , RN2509 , RN2510 , RN2511 , RN2601 , RN2602 , RN2603 , RN2604 , RN2605 .
History: LMUN2231LT1G | 2T3167B | SD1893 | DAT2 | BDB06 | HD1A3M | TD264-1
Keywords - RN2508 transistor datasheet
RN2508 cross reference
RN2508 equivalent finder
RN2508 lookup
RN2508 substitution
RN2508 replacement
History: LMUN2231LT1G | 2T3167B | SD1893 | DAT2 | BDB06 | HD1A3M | TD264-1



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