All Transistors. RN2610 Datasheet

 

RN2610 Datasheet, Equivalent, Cross Reference Search

Type Designator: RN2610

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT26_SC74_SM6

RN2610 Transistor Equivalent Substitute - Cross-Reference Search

 

RN2610 Datasheet (PDF)

1.1. rn2610 rn2611.pdf Size:115K _toshiba

RN2610
RN2610

RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2610,RN2611 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including twodevices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1610~RN16

Datasheet: RN2601 , RN2602 , RN2603 , RN2604 , RN2605 , RN2606 , RN2607 , RN2608 , BF199 , RN2611 , RN2701JE , RN2701 , RN2702JE , RN2702 , RN2703JE , RN2703 , RN2704JE .

 


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