RN2711JE Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2711JE
SMD Transistor Code: YM
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT553 ESV
RN2711JE Transistor Equivalent Substitute - Cross-Reference Search
RN2711JE Datasheet (PDF)
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RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2710,RN2711 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1
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RN2712JE,RN2713JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2712JE, RN2713JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufactur
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RN2714 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2714 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices incorporated in a USV (5-pin ultra-super-mini-type) Built-in bias resistors Simplified circuit design Reduced quantity of parts and manufacturing process Equiva
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RN2965FS
